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Properties of TiN thin films deposited by ALCVD as barriers for Cu metallization

dc.contributor.authorSatta, Alessandra
dc.contributor.authorBeyer, Gerald
dc.contributor.authorMaex, Karen
dc.contributor.authorElers, K.
dc.contributor.authorHaukka, S.
dc.contributor.authorVantomme, Andre
dc.date.accessioned2021-10-14T17:45:42Z
dc.date.available2021-10-14T17:45:42Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5632
dc.sourceIIOimport
dc.titleProperties of TiN thin films deposited by ALCVD as barriers for Cu metallization
dc.typeProceedings paper
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.source.peerreviewno
dc.source.beginpageD6.5.1
dc.source.endpageD6.5.6
dc.source.conferenceMaterials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics
dc.source.conferencedate23/04/2000
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Society Symposium Proceedings; Vol. 612


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