Show simple item record

Characterization of interstitial related defects in p-silicon substrates by homoepitaxial

dc.contributor.authorSchmolke, R.
dc.contributor.authorAngelberger, W.
dc.contributor.authorvon Ammon, W.
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-10-14T17:46:13Z
dc.date.available2021-10-14T17:46:13Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5635
dc.sourceIIOimport
dc.titleCharacterization of interstitial related defects in p-silicon substrates by homoepitaxial
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.source.peerreviewno
dc.source.beginpage231
dc.source.conferenceGADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;
dc.source.conferencelocation
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record