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Poly SiGe, a promising material for MEMS post-processing on top of standard CMOS wafers

dc.contributor.authorSedky, Sherif
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorBaert, Kris
dc.date.accessioned2021-10-14T17:47:15Z
dc.date.available2021-10-14T17:47:15Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5641
dc.sourceIIOimport
dc.titlePoly SiGe, a promising material for MEMS post-processing on top of standard CMOS wafers
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage988
dc.source.endpage991
dc.source.conferenceTransducers '01. Eurosensors XV. The 11th International Conference on Solid-State Sensors and Actuators; June 10-14, 2001. Munic
dc.source.conferencedate10/06/2001
dc.source.conferencelocationMünchen Germany
imec.availabilityPublished - imec


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