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Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C
Publication:
Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C
Date
2001
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sedky, Sherif
;
Witvrouw, Ann
;
Saerens, Annelies
;
Van Houtte, P.
;
Poortmans, Jef
;
Baert, Kris
Journal
Journal of Materials Research
Abstract
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2006
since deposited on 2021-10-14
Acq. date: 2025-10-24
Citations
Metrics
Views
2006
since deposited on 2021-10-14
Acq. date: 2025-10-24
Citations