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Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C

dc.contributor.authorSedky, Sherif
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorSaerens, Annelies
dc.contributor.authorVan Houtte, P.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorBaert, Kris
dc.date.accessioned2021-10-14T17:47:47Z
dc.date.available2021-10-14T17:47:47Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5644
dc.sourceIIOimport
dc.titleEffect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C
dc.typeJournal article
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage2607
dc.source.endpage2612
dc.source.journalJournal of Materials Research
dc.source.issue9
dc.source.volume16
imec.availabilityPublished - imec


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