Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C
dc.contributor.author | Sedky, Sherif | |
dc.contributor.author | Witvrouw, Ann | |
dc.contributor.author | Saerens, Annelies | |
dc.contributor.author | Van Houtte, P. | |
dc.contributor.author | Poortmans, Jef | |
dc.contributor.author | Baert, Kris | |
dc.date.accessioned | 2021-10-14T17:47:47Z | |
dc.date.available | 2021-10-14T17:47:47Z | |
dc.date.issued | 2001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5644 | |
dc.source | IIOimport | |
dc.title | Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C | |
dc.type | Journal article | |
dc.contributor.imecauthor | Poortmans, Jef | |
dc.contributor.orcidimec | Poortmans, Jef::0000-0003-2077-2545 | |
dc.source.peerreview | no | |
dc.source.beginpage | 2607 | |
dc.source.endpage | 2612 | |
dc.source.journal | Journal of Materials Research | |
dc.source.issue | 9 | |
dc.source.volume | 16 | |
imec.availability | Published - imec |
Files in this item
Files | Size | Format | View |
---|---|---|---|
There are no files associated with this item. |