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Steady state oxygen surface content in oxygen sputtered silicon at impact energy of 5 Kev per atom

dc.contributor.authorSerrano, J. J.
dc.contributor.authorBlanco, J. M.
dc.contributor.authorGuzman, B.
dc.contributor.authorDe Witte, Hilde
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-14T17:48:17Z
dc.date.available2021-10-14T17:48:17Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5647
dc.sourceIIOimport
dc.titleSteady state oxygen surface content in oxygen sputtered silicon at impact energy of 5 Kev per atom
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage4456
dc.source.endpage4466
dc.source.journalJournal of Applied Physics
dc.source.issue9
dc.source.volume90
imec.availabilityPublished - imec


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