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Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization

dc.contributor.authorSerrano, J. J.
dc.contributor.authorDe Witte, Hilde
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorGuzman, B.
dc.contributor.authorBlanco, J. M.
dc.date.accessioned2021-10-14T17:48:27Z
dc.date.available2021-10-14T17:48:27Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5648
dc.sourceIIOimport
dc.titleSimulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage5191
dc.source.endpage5198
dc.source.journalJournal of Applied Physics
dc.source.issue9
dc.source.volume89
imec.availabilityPublished - imec


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