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Critical study of the saturation drain voltage and the multiplication current in MOSFETs at liquid helium temperature

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-10-14T17:49:42Z
dc.date.available2021-10-14T17:49:42Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5655
dc.sourceIIOimport
dc.titleCritical study of the saturation drain voltage and the multiplication current in MOSFETs at liquid helium temperature
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage195
dc.source.endpage198
dc.source.conferenceProceedings of the 31st European Solid-State Device Research Conference
dc.source.conferencedate11/09/2001
dc.source.conferencelocationNuremberg Germany
imec.availabilityPublished - imec


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