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The effect of substrate radiation-induced defects on the operation of deep submicron silicon technologies

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorPoyai, Amporn
dc.date.accessioned2021-10-14T17:50:22Z
dc.date.available2021-10-14T17:50:22Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5659
dc.sourceIIOimport
dc.titleThe effect of substrate radiation-induced defects on the operation of deep submicron silicon technologies
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage75
dc.source.endpage92
dc.source.conferenceCrystalline Defects and Contamination: Their Impact and Control in Device Manufacturing III. DECON 2001. Proceedings of the Sate
dc.source.conferencedate13/09/2001
dc.source.conferencelocationNuremberg Germany
imec.availabilityPublished - imec


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