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DLTS PL studies of proton radiation defects in tin-doped FZ silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.contributor.authorPrivitera, Vittorio
dc.contributor.authorCoffa, S.
dc.contributor.authorKokkoris, M.
dc.contributor.authorKossionides, E.
dc.contributor.authorFanourakis, G.
dc.contributor.authorNylandsted Larsen, A.
dc.contributor.authorClauws., P.
dc.date.accessioned2021-10-14T17:50:33Z
dc.date.available2021-10-14T17:50:33Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5660
dc.sourceIIOimport
dc.titleDLTS PL studies of proton radiation defects in tin-doped FZ silicon
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conferenceSymposium B of the E-MRS Spring Meeting 2001: Defect Engineering of Advanced Semiconductor Devices; June 5-8, 2001; Strasbourg,
dc.source.conferencelocation
imec.availabilityPublished - imec
imec.internalnotes


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