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60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorHermans, Jan
dc.contributor.authorVereecken, Wim
dc.contributor.authorVermoere, Carl
dc.contributor.authorClaeys, C.
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorMohammadzadeh, A.
dc.date.accessioned2021-10-14T17:51:17Z
dc.date.available2021-10-14T17:51:17Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5664
dc.sourceIIOimport
dc.title60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorHermans, Jan
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHermans, Jan::0000-0003-1249-8902
dc.source.peerreviewno
dc.source.conferenceRADECS; 10-14 September 2001; Grenoble, France.
dc.source.conferencelocation
imec.availabilityPublished - imec


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