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Stress analysis with convergent beam electron diffraction around NMOS transistors

dc.contributor.authorStuer, Cindy
dc.contributor.authorBender, Hugo
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorEyben, Pierre
dc.date.accessioned2021-10-14T17:55:14Z
dc.date.available2021-10-14T17:55:14Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5686
dc.sourceIIOimport
dc.titleStress analysis with convergent beam electron diffraction around NMOS transistors
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorEyben, Pierre
dc.source.peerreviewno
dc.source.beginpage359
dc.source.endpage360
dc.source.conferenceProceedings 5th Multinational Conference on Electron Microscopy; 20-25 September 2001; Lecce, Italy.
dc.source.conferencelocation
imec.availabilityPublished - imec


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