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GaN based device structures grown in a close coupled showerhead MOCVD reactor

dc.contributor.authorThrush, E. J.
dc.contributor.authorKappers, M. J.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorDavies, R. A.
dc.contributor.authorWallis, R. H.
dc.contributor.authorPhillips, W. A.
dc.contributor.authorConsidine, L.
dc.contributor.authorHumphreys, C. J.
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T17:59:29Z
dc.date.available2021-10-14T17:59:29Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5709
dc.sourceIIOimport
dc.titleGaN based device structures grown in a close coupled showerhead MOCVD reactor
dc.typeOral presentation
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.conferenceNational Chinese MOCVD Conferenc; October 2001;
dc.source.conferencelocation
imec.availabilityPublished - imec


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