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dc.contributor.authorCova, P.
dc.contributor.authorMenozzi, R.
dc.contributor.authorLacey, D.
dc.contributor.authorBaeyens, Yves
dc.contributor.authorFantini, F.
dc.date.accessioned2021-09-29T13:04:45Z
dc.date.available2021-09-29T13:04:45Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/572
dc.sourceIIOimport
dc.titleHot electron degradation effects in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs PHEMTs
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage98
dc.source.endpage103
dc.source.conferenceIEEE 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO; 27 Nov. 1995; Londo
dc.source.conferencelocation
imec.availabilityPublished - imec


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