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Improved LOCOS isolation for ultra thin 0.18 μm fully-depleted SOI CMOS

dc.contributor.authorvan Meer, Hans
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-14T18:05:44Z
dc.date.available2021-10-14T18:05:44Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5742
dc.sourceIIOimport
dc.titleImproved LOCOS isolation for ultra thin 0.18 μm fully-depleted SOI CMOS
dc.typeProceedings paper
dc.contributor.imecauthorDe Meyer, Kristin
dc.source.peerreviewno
dc.source.beginpage301
dc.source.endpage306
dc.source.conferenceProceedings 10th International Symposium on Silicon-on-Insulator Technology and Devices; 26 March 2001; Washington, D.C., USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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