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Two-dimensional model for the threshold slope in deep-submicron fully-depleted SOI MOSFET's

dc.contributor.authorvan Meer, Hans
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-14T18:06:05Z
dc.date.available2021-10-14T18:06:05Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5744
dc.sourceIIOimport
dc.titleTwo-dimensional model for the threshold slope in deep-submicron fully-depleted SOI MOSFET's
dc.typeProceedings paper
dc.contributor.imecauthorDe Meyer, Kristin
dc.source.peerreviewno
dc.source.beginpage238
dc.source.endpage241
dc.source.conferenceProceedings of the SISPAD Conference; Athens, Greece.
dc.source.conferencelocation
imec.availabilityPublished - imec


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