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Comparison of Different Buffer Layers for 1.9% Lattice-Mismatched InGaAs on InP for 2.5 mm Wavelength Photodetector Application

dc.contributor.authorD'Hondt, Mark
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.date.accessioned2021-09-29T13:04:48Z
dc.date.available2021-09-29T13:04:48Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/576
dc.sourceIIOimport
dc.titleComparison of Different Buffer Layers for 1.9% Lattice-Mismatched InGaAs on InP for 2.5 mm Wavelength Photodetector Application
dc.typeOral presentation
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.source.peerreviewno
dc.source.conference6th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques (EW MOVPE VI '95); June 25-28, 1995; G
dc.source.conferencelocation
imec.availabilityPublished - imec
imec.internalnotes


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