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Depth profiling of B through silicide on silicon structures, using SIMS and resonant post-ionisation SIMS

dc.contributor.authorDe Bisschop, Peter
dc.contributor.authorGomez, G.
dc.contributor.authorGeenen, Luc
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-09-29T13:04:51Z
dc.date.available2021-09-29T13:04:51Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/579
dc.sourceIIOimport
dc.titleDepth profiling of B through silicide on silicon structures, using SIMS and resonant post-ionisation SIMS
dc.typeProceedings paper
dc.contributor.imecauthorDe Bisschop, Peter
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage22.1
dc.source.conference3rd Int. Workshop on the Measurement and Characterizaton of Ultra-Shallow Dopant Profiles in Semiconductors
dc.source.conferencedate20/03/1995
dc.source.conferencelocationResearch Triangle Park, NC USA
imec.availabilityPublished - open access


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