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Analysis and improved compact modelling of the breakdown behaviour of sub-0.25 micron ESD protection ggNMOS devices
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Analysis and improved compact modelling of the breakdown behaviour of sub-0.25 micron ESD protection ggNMOS devices
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Date
2001
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vassilev, Vesselin
;
Lorenzini, Martino
;
Groeseneken, Guido
;
Steyaert, Michel
;
Maes, Herman
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1928
since deposited on 2021-10-14
1
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Acq. date: 2026-01-09
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Metrics
Views
1928
since deposited on 2021-10-14
1
last month
Acq. date: 2026-01-09
Citations