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A novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanism

dc.contributor.authorVillaneuva, D.
dc.contributor.authorMoens, P.
dc.contributor.authorKrishnasamy, Rajendran
dc.contributor.authorSchoenmaker, Wim
dc.date.accessioned2021-10-14T18:20:24Z
dc.date.available2021-10-14T18:20:24Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5818
dc.sourceIIOimport
dc.titleA novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanism
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage22
dc.source.endpage25
dc.source.conferenceProceedings of the International Conference on Simulation of Semiconductor Physics and Processes - SISPAD; 5-7 September 2001; A
dc.source.conferencelocation
imec.availabilityPublished - imec


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