Extraction of Recombination Coefficients for Electrically Injected InGaAs/GaAs Monolithic Nano-ridge Laser Diodes Integrated on Silicon

Abstract

We present the extraction of recombination coefficients for electrically injected monolithic nano-ridge laser diodes by first determining the effective carrier capture time from the small signal modulation response. The effect of the nano-ridge box size on the recombination coefficients is investigated.