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Statistical aspects of the degradation of LDD nMOSFETs

dc.contributor.authorAndries, E.
dc.contributor.authorDreesen, R.
dc.contributor.authorCroes, K.
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorDe Schepper, Luc
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorLo, K.F.
dc.contributor.authorD'Olieslaeger, Marc
dc.contributor.authorD'Haen, Jan
dc.date.accessioned2021-10-14T21:07:15Z
dc.date.available2021-10-14T21:07:15Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5957
dc.sourceIIOimport
dc.titleStatistical aspects of the degradation of LDD nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorDe Ceuninck, Ward
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorD'Olieslaeger, Marc
dc.contributor.imecauthorD'Haen, Jan
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1409
dc.source.endpage1413
dc.source.journalMicroelectronics Reliability
dc.source.issue9_11
dc.source.volume42
imec.availabilityPublished - open access
imec.internalnotes13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF; October 2002; Rimini, Italy


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