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Cost effective implementation of a 90 V RESURF P-type drain extended MOS in a 0.35 μm based smart power technology

dc.contributor.authorBakeroot, Benoit
dc.contributor.authorVermandel, Miguel
dc.contributor.authorMoens, P.
dc.contributor.authorDoutreloigne, Jan
dc.contributor.authorBolognesi, D.
dc.date.accessioned2021-10-14T21:07:52Z
dc.date.available2021-10-14T21:07:52Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5984
dc.sourceIIOimport
dc.titleCost effective implementation of a 90 V RESURF P-type drain extended MOS in a 0.35 μm based smart power technology
dc.typeProceedings paper
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDoutreloigne, Jan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage291
dc.source.endpage294
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
imec.availabilityPublished - imec


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