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Modelling of crystal originated particles and their impact on gate oxide integrity

dc.contributor.authorBearda, Twan
dc.contributor.authorMertens, Paul
dc.contributor.authorWoerlee, P. H.
dc.contributor.authorWallinga, H.
dc.contributor.authorSchmolke, R.
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-14T21:08:24Z
dc.date.available2021-10-14T21:08:24Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6000
dc.sourceIIOimport
dc.titleModelling of crystal originated particles and their impact on gate oxide integrity
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.source.peerreviewno
dc.source.beginpage528
dc.source.endpage539
dc.source.conferenceSemiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology
dc.source.conferencedate12/05/2002
dc.source.conferencelocationPhiladelphia, PA USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2002-2


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