2026 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS
Abstract
We model experimental NanoWire (NW) nFET I-V aging under Bias Temperature Instability (BTI) and Hot-Carrier (HC) stress using our compact physics-aware framework ComphU. We introduce a new simplified and computationally efficient approach to Distribution Function (DF) modeling applicable for short- Lg FETs and successfully lump the time- 0 variability into a limited parameter set. Our model describes experimental ΔVth (t) and ΔId,on (t) traces well. Using the calibrated model, we find that i) the intrinsic time- 0gm, max is 39 % higher than the extrinsic one, ii) aging outside the calibration region is predicted reasonably, and that the BTI lifetime iii) roughly doubles for every 0.1 V reduction in the supply voltage and iv) increases up to 6.3× for every 0.1 V increase in Vth, 0.
