METROLOGY, INSPECTION, AND PROCESS CONTROL XL, PT 1
Abstract
In this work, we evaluated a nano-through-silicon vias (nano-TSV) to buried power rails (BPR) connection that included realistic process effects. Resistance performance was explored to provide design guidelines and RC performance of the backside to frontside connectivity via a nano-TSV connection. Simulation results were also benchmarked against electrical measurements. This type of study can be used to provide Keep out Zone (KoZ) guidelines for TSV integration.
