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Characterisation of GaN buffers with AIN interlayers used as semi-insulating templates for HEMT strutures

dc.contributor.authorBougrioua, Z.
dc.contributor.authorLeroux, M.
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T21:11:17Z
dc.date.available2021-10-14T21:11:17Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6061
dc.sourceIIOimport
dc.titleCharacterisation of GaN buffers with AIN interlayers used as semi-insulating templates for HEMT strutures
dc.typeMeeting abstract
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage382
dc.source.conferenceInternational Workshop on Nitride Semiconductors
dc.source.conferencedate22/07/2002
dc.source.conferencelocationAachen Germany
imec.availabilityPublished - open access


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