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Engineering of an insulating buffer and use of AIN interlayers: two optimisations for AlGaN-GaN HEMT-like structures

dc.contributor.authorBougrioua, Z.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorNistor, L.
dc.contributor.authorMonroy, E.
dc.contributor.authorCalle, F.
dc.date.accessioned2021-10-14T21:11:21Z
dc.date.available2021-10-14T21:11:21Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6062
dc.sourceIIOimport
dc.titleEngineering of an insulating buffer and use of AIN interlayers: two optimisations for AlGaN-GaN HEMT-like structures
dc.typeMeeting abstract
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceEXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies
dc.source.conferencedate26/05/2002
dc.source.conferencelocationBudapest Hungary
imec.availabilityPublished - open access


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