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Fabrication and performance of AlGaN/GaN HEMTS

dc.contributor.authorCalle, F.
dc.contributor.authorPalacios, T.
dc.contributor.authorMonroy, E.
dc.contributor.authorGrajal, J.
dc.contributor.authorTirado, J.M.
dc.contributor.authorJiménez, A.
dc.contributor.authorRanchal, R.
dc.contributor.authorMunoz, E.
dc.contributor.authorVerdu, M.
dc.contributor.authorSanchez, F.J.
dc.contributor.authorMontojo, M.T.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T21:12:08Z
dc.date.available2021-10-14T21:12:08Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6076
dc.sourceIIOimport
dc.titleFabrication and performance of AlGaN/GaN HEMTS
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage25
dc.source.endpage28
dc.source.conferenceProceedings 4th International Conference on Materials for Microelectronics and Nanoengineering
dc.source.conferencedate10/06/2002
dc.source.conferencelocationEspoo Finland
imec.availabilityPublished - imec


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