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The importance of the determination of polysilicon dopant profile during process development

dc.contributor.authorDebusschere, Ingrid
dc.contributor.authorDeferm, Ludo
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-09-29T13:05:28Z
dc.date.available2021-09-29T13:05:28Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/611
dc.sourceIIOimport
dc.titleThe importance of the determination of polysilicon dopant profile during process development
dc.typeProceedings paper
dc.contributor.imecauthorDebusschere, Ingrid
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage13.1
dc.source.endpage13.8
dc.source.conference3rd Intern. Workshop on the Measurement and Characterizaton of Ultra-Shallow Dopant Profiles in Semiconductors
dc.source.conferencedate20/03/1995
dc.source.conferencelocationResearch Triangle Park, NC USA
imec.availabilityPublished - open access


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