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Influence of gamma-radiation on short channel SOI-MOSFETs with thin SiO2 films

dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLitovchenko, V.G.
dc.contributor.authorEvtukh, A.
dc.contributor.authorEfremov, A.
dc.contributor.authorKizjak, A.
dc.contributor.authorRassamakin, J.
dc.contributor.authorBalestra, F.
dc.contributor.authorNazarov, A.
dc.contributor.authorLysenko, V.S.
dc.date.accessioned2021-10-14T21:15:16Z
dc.date.available2021-10-14T21:15:16Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6120
dc.sourceIIOimport
dc.titleInfluence of gamma-radiation on short channel SOI-MOSFETs with thin SiO2 films
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage211
dc.source.endpage220
dc.source.conferenceProgress in SOI Structures and Devices Operating at Extreme Conditions. Proceedings of the NATO Advanced Research Workshop
dc.source.conferencedate15/10/2000
dc.source.conferencelocationKyiv Ukraine
imec.availabilityPublished - imec
imec.internalnotesNATO Science Series II: Mathematics, Physics and Chemistry; Vol. 58


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