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Characterization of low energy (2-5keV) implantation into Si

dc.contributor.authorCollart, E.J.
dc.contributor.authorKirkwood, D.
dc.contributor.authorVandenberg, J.A.
dc.contributor.authorWerner, M.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBrijs, Bert
dc.contributor.authorBailey, P.
dc.contributor.authorNoakes, T.C.Q.
dc.date.accessioned2021-10-14T21:16:05Z
dc.date.available2021-10-14T21:16:05Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6130
dc.sourceIIOimport
dc.titleCharacterization of low energy (2-5keV) implantation into Si
dc.typeOral presentation
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.conferenceIon Implantation Conference
dc.source.conferencedate22/09/2002
dc.source.conferencelocationTaos, NM USA
imec.availabilityPublished - imec


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