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p-n Junction leeakage in neutron-irradiated diodes fabricated in various silicon substrates

dc.contributor.authorCzerwinski, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPoyai, Amporn
dc.contributor.authorClaeys, C.
dc.contributor.authorOhyama, Hidenori
dc.date.accessioned2021-10-14T21:19:11Z
dc.date.available2021-10-14T21:19:11Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6165
dc.sourceIIOimport
dc.titlep-n Junction leeakage in neutron-irradiated diodes fabricated in various silicon substrates
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage447
dc.source.endpage452
dc.source.conferenceGADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology
dc.source.conferencedate30/09/2001
dc.source.conferencelocationCatania Italy
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 82-84


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