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Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

dc.contributor.authorDe Gryse, O.
dc.contributor.authorClauws, P.
dc.contributor.authorVanhellemont, J.
dc.contributor.authorLebedev, O.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T21:21:30Z
dc.date.available2021-10-14T21:21:30Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6188
dc.sourceIIOimport
dc.titleChemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage183
dc.source.endpage194
dc.source.conferenceHigh Purity Silicon VII
dc.source.conferencedate20/10/2002
dc.source.conferencelocationSalt Lake City, UT USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Series Proceedings; PV 2002-20


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