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Electric stress-induced degradation of thin oxide layers and its impact on device reliability

dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-14T21:27:34Z
dc.date.available2021-10-14T21:27:34Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6245
dc.sourceIIOimport
dc.titleElectric stress-induced degradation of thin oxide layers and its impact on device reliability
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewno
dc.source.beginpage475
dc.source.endpage488
dc.source.conferenceSemiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology
dc.source.conferencedate13/05/2002
dc.source.conferencelocationPhiladelphia, PA USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2002-2


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