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Determination of tunnelling parameters in ultra-thin oxide poly-Si/SiO2/Si structures

dc.contributor.authorDepas, Michel
dc.contributor.authorVermeire, Bert
dc.contributor.authorMertens, Paul
dc.contributor.authorVan Meirhaeghe, R. L.
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-29T13:05:46Z
dc.date.available2021-09-29T13:05:46Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/624
dc.sourceIIOimport
dc.titleDetermination of tunnelling parameters in ultra-thin oxide poly-Si/SiO2/Si structures
dc.typeJournal article
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1465
dc.source.endpage1471
dc.source.journalSolid-State Electronics
dc.source.issue8
dc.source.volume38
imec.availabilityPublished - open access


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