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Ternary CoxFe(1-x)Si2 and NixFe(1-x)Si2 formed by ion implantation in silicon

dc.contributor.authorFetzer, C.
dc.contributor.authorDézsi, I.
dc.contributor.authorVantomme, Andre
dc.contributor.authorWu, M.F.
dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-10-14T21:37:12Z
dc.date.available2021-10-14T21:37:12Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6321
dc.sourceIIOimport
dc.titleTernary CoxFe(1-x)Si2 and NixFe(1-x)Si2 formed by ion implantation in silicon
dc.typeJournal article
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorBender, Hugo
dc.source.peerreviewno
dc.source.beginpage3688
dc.source.endpage3693
dc.source.journalJournal of Applied Physics
dc.source.issue7
dc.source.volume92
imec.availabilityPublished - imec


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