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Electrical activity of B and As segregated at the Si-SiO2 interface

dc.contributor.authorFruehauf, Jens
dc.contributor.authorLindsay, Richard
dc.contributor.authorBergmaier, Andreas
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorTempel, Georg
dc.contributor.authorMaex, Karen
dc.contributor.authorDollinger, Günther
dc.contributor.authorKoch, Frederick
dc.date.accessioned2021-10-14T21:39:35Z
dc.date.available2021-10-14T21:39:35Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6338
dc.sourceIIOimport
dc.titleElectrical activity of B and As segregated at the Si-SiO2 interface
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpageC3.4
dc.source.conferenceSilicon Front-End Junction Formation Technologies
dc.source.conferencedate1/04/2002
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Proceedings; Vol. 717


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