Show simple item record

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)

dc.contributor.authorGreen, Martin
dc.contributor.authorHo, M.Y.
dc.contributor.authorBusch, B.
dc.contributor.authorWilk, G.D.
dc.contributor.authorSorsch, T.
dc.contributor.authorConard, Thierry
dc.contributor.authorBrijs, Bert
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorRäisänen, P.I.
dc.contributor.authorMuller, D.
dc.contributor.authorBude, M.
dc.contributor.authorGrazul, J.
dc.date.accessioned2021-10-14T21:43:48Z
dc.date.available2021-10-14T21:43:48Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6367
dc.sourceIIOimport
dc.titleNucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
dc.typeJournal article
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.beginpage7168
dc.source.endpage7172
dc.source.journalJournal of Applied Physics
dc.source.issue12
dc.source.volume92
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record