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Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
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Authors
Green, Martin
;
Ho, M.Y.
;
Busch, B.
;
Wilk, G.D.
;
Sorsch, T.
;
Conard, Thierry
;
Brijs, Bert
;
Vandervorst, Wilfried
;
Räisänen, P.I.
;
Muller, D.
;
Bude, M.
;
Grazul, J.
Issue
12
Journal
Journal of Applied Physics
Volume
92
Title
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
Publication type
Journal article
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