Publication:
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
Date
| dc.contributor.author | Green, Martin | |
| dc.contributor.author | Ho, M.Y. | |
| dc.contributor.author | Busch, B. | |
| dc.contributor.author | Wilk, G.D. | |
| dc.contributor.author | Sorsch, T. | |
| dc.contributor.author | Conard, Thierry | |
| dc.contributor.author | Brijs, Bert | |
| dc.contributor.author | Vandervorst, Wilfried | |
| dc.contributor.author | Räisänen, P.I. | |
| dc.contributor.author | Muller, D. | |
| dc.contributor.author | Bude, M. | |
| dc.contributor.author | Grazul, J. | |
| dc.contributor.imecauthor | Conard, Thierry | |
| dc.contributor.imecauthor | Vandervorst, Wilfried | |
| dc.contributor.orcidimec | Conard, Thierry::0000-0002-4298-5851 | |
| dc.date.accessioned | 2021-10-14T21:43:48Z | |
| dc.date.available | 2021-10-14T21:43:48Z | |
| dc.date.issued | 2002 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/6367 | |
| dc.source.beginpage | 7168 | |
| dc.source.endpage | 7172 | |
| dc.source.issue | 12 | |
| dc.source.journal | Journal of Applied Physics | |
| dc.source.volume | 92 | |
| dc.title | Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N) | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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