Publication:
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
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1995 since deposited on 2021-10-14
Acq. date: 2025-12-08
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Metrics
Views
1995 since deposited on 2021-10-14
Acq. date: 2025-12-08
Citations