Publication:
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
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1996 since deposited on 2021-10-14
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Acq. date: 2026-01-26
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Statistics
Views
1996 since deposited on 2021-10-14
1last month
1last week
Acq. date: 2026-01-26
Citations