Publication:
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
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1998 since deposited on 2021-10-14
2last month
Acq. date: 2026-02-25
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Statistics
Views
1998 since deposited on 2021-10-14
2last month
Acq. date: 2026-02-25
Citations