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Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks

dc.contributor.authorHoussa, M.
dc.contributor.authorAutran, J.L.
dc.contributor.authorStesmans, Andre
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-14T21:50:39Z
dc.date.available2021-10-14T21:50:39Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6410
dc.sourceIIOimport
dc.titleModel for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks
dc.typeJournal article
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHeyns, Marc
dc.source.peerreviewno
dc.source.beginpage709
dc.source.endpage711
dc.source.journalApplied Physics Letters
dc.source.issue4
dc.source.volume81
imec.availabilityPublished - imec


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