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Dependence of the minimal PVD Ta(N) sealing thickness on the porosity of Zirkon low-k films

dc.contributor.authorIacopi, Francesca
dc.contributor.authorZistl, C.
dc.contributor.authorJehoul, Christiane
dc.contributor.authorTokei, Zsolt
dc.contributor.authorLe, Quoc Toan
dc.contributor.authorDas, Arabinda
dc.contributor.authorSullivan, C.
dc.contributor.authorProkopowicz, G.
dc.contributor.authorGronbeck, D.
dc.contributor.authorGallagher, M.
dc.contributor.authorCalvert, J.
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-14T21:52:27Z
dc.date.available2021-10-14T21:52:27Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6421
dc.sourceIIOimport
dc.titleDependence of the minimal PVD Ta(N) sealing thickness on the porosity of Zirkon low-k films
dc.typeJournal article
dc.contributor.imecauthorJehoul, Christiane
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorLe, Quoc Toan
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecLe, Quoc Toan::0000-0002-0206-6279
dc.source.peerreviewno
dc.source.beginpage351
dc.source.endpage360
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume64
imec.availabilityPublished - imec
imec.internalnotesMAM2002; Vaals, The Netherlands, 3-6 March 2002


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