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Low temperature doping of silicon by hydrogen plasma treatments

dc.contributor.authorJob, R.
dc.contributor.authorUlyashin, A.G.
dc.contributor.authorMa, Y.
dc.contributor.authorFahrner, W.R.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorClaeys, Cor
dc.contributor.authorNiedernostheide, F.J.
dc.contributor.authorSchulze, H.J.
dc.date.accessioned2021-10-14T21:56:14Z
dc.date.available2021-10-14T21:56:14Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6444
dc.sourceIIOimport
dc.titleLow temperature doping of silicon by hydrogen plasma treatments
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage141
dc.source.endpage154
dc.source.conferenceHigh Purity Silicon VII
dc.source.conferencedate20/10/2002
dc.source.conferencelocationSalt Lake City, UT USA
imec.availabilityPublished - imec
imec.internalnotesECS Proceedings; Vol. 2002-20


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