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Understanding nMOSFET characteristics after soft breakdown and their dependence on the breakdown location

dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCrupi, Felice
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-14T21:58:38Z
dc.date.available2021-10-14T21:58:38Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6459
dc.sourceIIOimport
dc.titleUnderstanding nMOSFET characteristics after soft breakdown and their dependence on the breakdown location
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage139
dc.source.endpage142
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
imec.availabilityPublished - open access


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