Charging instability in n-channel MOSFETs with SiO2/HfO2 gate dielectrics
dc.contributor.author | Kerber, Andreas | |
dc.contributor.author | Cartier, Eduard | |
dc.contributor.author | Pantisano, Luigi | |
dc.contributor.author | Degraeve, Robin | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Maes, Herman | |
dc.contributor.author | Schwalke, U. | |
dc.date.accessioned | 2021-10-14T22:00:56Z | |
dc.date.available | 2021-10-14T22:00:56Z | |
dc.date.issued | 2002 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/6472 | |
dc.source | IIOimport | |
dc.title | Charging instability in n-channel MOSFETs with SiO2/HfO2 gate dielectrics | |
dc.type | Oral presentation | |
dc.contributor.imecauthor | Degraeve, Robin | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.source.peerreview | no | |
dc.source.conference | 33rd IEEE Semiconductor Interface Specialists Conference - SISC | |
dc.source.conferencedate | 5/12/2002 | |
dc.source.conferencelocation | San Diego, CA USA | |
imec.availability | Published - imec |
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