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Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope

dc.contributor.authorFedina, L.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorAseev, A.
dc.date.accessioned2021-09-29T13:06:25Z
dc.date.available2021-09-29T13:06:25Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/647
dc.sourceIIOimport
dc.titleObservation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage189
dc.source.endpage94
dc.source.conferenceIn Situ Electron and Tunneling Microscopy of Dynamic Processes; 27-30 Nov. 1995; Boston, MA, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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