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Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM

dc.contributor.authorKim, Young-Chang
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorVerhaegen, Staf
dc.contributor.authorRonse, Kurt
dc.date.accessioned2021-10-14T22:02:15Z
dc.date.available2021-10-14T22:02:15Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6480
dc.sourceIIOimport
dc.titleChallenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM
dc.typeProceedings paper
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.imecauthorRonse, Kurt
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.source.peerreviewno
dc.source.beginpage954
dc.source.endpage967
dc.source.conference21st Annual BACUS Symposium on Photomask Technology
dc.source.conferencedate3/10/2001
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 4562


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