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Delay Times in Lattice Matched InGaAs/InP HEMT's with Gatelengths between 80 and 250 nm

dc.contributor.authorFinders, Jo
dc.contributor.authorBaeyens, Yves
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-29T13:06:27Z
dc.date.available2021-09-29T13:06:27Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/648
dc.sourceIIOimport
dc.titleDelay Times in Lattice Matched InGaAs/InP HEMT's with Gatelengths between 80 and 250 nm
dc.typeOral presentation
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorNauwelaers, Bart
dc.source.peerreviewno
dc.source.conference19th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE '95); May 21-24, 1995; Stockholm, Sweden.
dc.source.conferencelocation
imec.availabilityPublished - imec


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